Unique USHIO EB
sources provide electron beams with potentials of
50-80 keV. These units are compact, self-shielding,
and can be integrated into “in-line” process
applications. Current EB sources are based on a
unique design of the window. These systems can
incorporate a wide variety operating environments,
power and feedback control systems.
- Higher Power systems are also available.
- Exposure Chambers
- Integrated Systems
|
Feature |
 |
Benefit |
| Low voltage
electrons |
|
- Allows
maximum transfer of energy into the surface
of the exposed material
- Optimizes reactions in this 10-80 micron
depth
Minimizes effects on or damage to the
substrate below this depth |
| Compact, self-shielding
unit |
|
Supports
selected reactions with specificity not
available from higher power sources |
Additional comparisons between conventional EB and
LVEB
|
Characteristic |
|
Conventional |
|
LVEB |
| Accelerated
voltage |
|
> 100 kV |
|
50-80 kV |
| Absorbed energy
efficiency |
|
20-50% |
|
> 50% |
| X-ray generation |
|
High |
|
Low |
| Ozone generation |
|
High |
|
Low |
| System size |
|
Large |
|
Small |
| Vacuum equipment |
|
Required |
|
None |
| Warm-up interval |
|
Long |
|
< 1 minute |
|
