Contact-Proximity Aligners UX-3 Series

UX-3 Series

Contact-Proximity Aligners

This mask aligner uses light source and optical technologies developed by Ushio over many years. This exposure device supports not only ihg rays, but the deep UV range as well.

Component Technology

- Includes the world's number one super high-pressure UV lamp
- Our own irradiation optical system boasting a high degree of uniformity

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Features & Benefits

  • High resolution
    The highest line-space resolution of 1 um (vacuum hard contact) is achieved. Proximity lithography achieves high line-space resolution of 3 um at 20 um gap. Line width stability is also excellent with high stage flatness and gap stability. We can propose the best optical system to achieve the optimal resolution for each lithography mode according to the material.
  • Achieves high overlay accuracy
    Overlay precision: achieves ±1 um during surface alignment, and ±1.5 um during back side alignment. High-precision registration accuracy is achieved by optimal alignment lighting and image processing software techniques to suit various substrates and alignment marks.

Applications

  • MEMS
  • Crystal oscillators
  • SAW filters
  • RF devices
  • Sensors
  • Inkjet heads
  • Diodes
  • IGBT
  • Power semiconductors
  • Thyristors
  • MOS-FETs
  • LEDs
  • Power amps
  • MMICs
  • BAW filters
  • Acceleration sensors
  • Inductors
  • Passive components
  • Solar cells and more

Specifications

ModelContact SystemResolutionExposure SystemWafer SizeWavelengthAlignment Accuracy
UX-3300SCVacuum Contact1 µm L/SOne-side exposureto 200 mm dia.i, ih and ihg lines±1 µm (front side) ±1.5 µm (back side)
UX-3300SCHard Contact2 µm L/SOne-side exposureto 200 mm dia.i, ih and ihg lines±1 µm (front side) ±1.5 µm (back side)
UX-3300SCSoft Contact2 µm L/SOne-side exposureto 200 mm dia.i, ih and ihg lines±1 µm (front side) ±1.5 µm (back side)
UX-3300SCProximity gap 20 µm3 µm L/SOne-side exposureto 200 mm dia.i, ih and ihg lines±1 µm (front side) ±1.5 µm (back side)
UX Series Lineup