660nm - 670nm Multi-Beam Red Laser Diode
5mW - 25mW per beam
Ushio Opto-Semiconductors, Inc. has 10+ years of manufacturing experience with red multi-beam laser diodes, providing a customized solution that best addresses specific application needs.
Available in the 660nm-670nm range with a built-in photodiode and an output of 5mW-25mW per beam, our unique chip structure allows for narrow pitch and improved I-L characteristics. This structure also resolves thermal interference between the beams by lowering the threshold and increasing efficiency.
Available in the 660nm-670nm range with a built-in photodiode and an output of 5mW-25mW per beam, our unique chip structure allows for narrow pitch and improved I-L characteristics. This structure also resolves thermal interference between the beams by lowering the threshold and increasing efficiency.
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Features & Benefits
- Multi-beam (qty. 2 – 8)
- Minimum beam pitch of 50um
- Possible to independently drive each beam
- All beams have uniform performance characteristics
- Less thermal interaction between beams
Applications
- Printing
Media
